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K7N803209B-QI22 PDF预览

K7N803209B-QI22

更新时间: 2024-11-20 04:22:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
24页 536K
描述
ZBT SRAM, 256KX32, 2.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

K7N803209B-QI22 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:2.8 nsJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:8388608 bit
内存集成电路类型:ZBT SRAM内存宽度:32
功能数量:1端子数量:100
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX32
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mm

K7N803209B-QI22 数据手册

 浏览型号K7N803209B-QI22的Datasheet PDF文件第2页浏览型号K7N803209B-QI22的Datasheet PDF文件第3页浏览型号K7N803209B-QI22的Datasheet PDF文件第4页浏览型号K7N803209B-QI22的Datasheet PDF文件第5页浏览型号K7N803209B-QI22的Datasheet PDF文件第6页浏览型号K7N803209B-QI22的Datasheet PDF文件第7页 
K7N803609B  
K7N803209B  
K7N801809B  
256Kx36/x32 & 512Kx18 Pipelined NtRAMTM  
Document Title  
256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
1.0  
1. Initial document.  
May. 18. 2001  
Aug. 11. 2001  
Aug. 28. 2001  
Nov. 16. 2001  
Preliminary  
Preliminary  
Preliminary  
Final  
1. Add x32 org part and industrial temperature part  
1. change scan order(1) form 4T to 6T at 119BGA(x18)  
1. Final spec release  
2. Change ISB2 form 50mA to 60mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
Nov 2001  
Rev 1.0  

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