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K7N803601A-HC160 PDF预览

K7N803601A-HC160

更新时间: 2024-11-24 08:03:15
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
20页 459K
描述
ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, BGA-119

K7N803601A-HC160 数据手册

 浏览型号K7N803601A-HC160的Datasheet PDF文件第2页浏览型号K7N803601A-HC160的Datasheet PDF文件第3页浏览型号K7N803601A-HC160的Datasheet PDF文件第4页浏览型号K7N803601A-HC160的Datasheet PDF文件第5页浏览型号K7N803601A-HC160的Datasheet PDF文件第6页浏览型号K7N803601A-HC160的Datasheet PDF文件第7页 
K7N803601A  
K7N801801A  
256Kx36 & 512Kx18 Pipelined NtRAMTM  
Document Title  
256Kx36-Bit Pipelined NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
1.0  
1. Initial document.  
May. 24. 2000  
July. 03. 2000  
Preliminary  
Final  
1. Final spec Release.  
2. Add 119BGA(7x17 Ball Grid Array Package)  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
July 2000  
Rev 1.0  

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