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K7N163645M-QC13T PDF预览

K7N163645M-QC13T

更新时间: 2023-02-26 16:10:48
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
20页 355K
描述
ZBT SRAM, 512KX36, 4.2ns, CMOS, PQFP100

K7N163645M-QC13T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:QFP, QFP100,.63X.87
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:4.2 nsI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
内存密度:18874368 bit内存集成电路类型:ZBT SRAM
内存宽度:36湿度敏感等级:3
端子数量:100字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5 V
认证状态:Not Qualified最大待机电流:0.01 A
最小待机电流:2.38 V子类别:SRAMs
最大压摆率:0.28 mA标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40

K7N163645M-QC13T 数据手册

 浏览型号K7N163645M-QC13T的Datasheet PDF文件第2页浏览型号K7N163645M-QC13T的Datasheet PDF文件第3页浏览型号K7N163645M-QC13T的Datasheet PDF文件第4页浏览型号K7N163645M-QC13T的Datasheet PDF文件第5页浏览型号K7N163645M-QC13T的Datasheet PDF文件第6页浏览型号K7N163645M-QC13T的Datasheet PDF文件第7页 
K7N163645M  
K7N161845M  
512Kx36 & 1Mx18 Pipelined NtRAMTM  
Document Title  
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Preliminary  
Preliminary  
Preliminary  
Dec. 22. 1998  
May. 27. 1999  
Nov. 19. 1999  
0.0  
1. Initial document.  
1. Update ICC & ISB values.  
0.1  
0.2  
1. Change pin allocation at 119BGA .  
- A4 ; from NC to A .  
- B2 ; from A to CS2  
- B4 ; from CKE to ADV  
- B6 ; from A to CS2  
- G4 ; from ADV to A  
- H4 ; from NC to WE  
- M4 ; from WE toCKE  
2. Changed DC condition at Icc and parameters  
Icc ; from 320mA to 300mA at -67,  
from 300mA to 280mA at -75,  
Preliminary  
Fianl  
Nov. 26. 1999  
Jan. 28. 2000  
Feb. 23. 2001  
0.3  
1.0  
2.0  
Add tCYC 167MHz.  
Final spec release  
1. Remove 100MHz  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
February 2001  
Rev 2.0  
- 1 -  

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