Datasheet > K7N163645M-QC15T

K7N163645M-QC15T

更新时间： 2023-01-02 13:48:33

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
20页	355K
描述
ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100

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K7N163645M-QC15T 数据手册

K7N163645M

K7N161845M

512Kx36 & 1Mx18 Pipelined NtRAM^TM

Document Title

512Kx36 & 1Mx18-Bit Pipelined NtRAM^TM

Revision History

Draft Date

Remark

Rev. No.

History

Preliminary

Dec. 22. 1998

May. 27. 1999

Nov. 19. 1999

0.0

1. Initial document.

1. Update ICC & ISB values.

0.1

0.2

1. Change pin allocation at 119BGA .

- A4 ; from NC to A .

- B2 ; from A to CS2

- B4 ; from CKE to ADV

- B6 ; from A to CS2

- G4 ; from ADV to A

- H4 ; from NC to WE

- M4 ; from WE toCKE

2. Changed DC condition at Icc and parameters

Icc ; from 320mA to 300mA at -67,

from 300mA to 280mA at -75,

Preliminary

Fianl

Nov. 26. 1999

Jan. 28. 2000

Feb. 23. 2001

0.3

1.0

2.0

Add tCYC 167MHz.

Final spec release

1. Remove 100MHz

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

February 2001

Rev 2.0

- 1 -

12 3 4 5 6 7...20

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与K7N163645M-QC15T相关器件

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K7N163645M-QC16	SAMSUNG	获取价格	ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
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K7N163645M-TC16	SAMSUNG	获取价格	ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
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K7N163645-QC25	SAMSUNG	获取价格	512Kx36 & 1Mx18-Bit Flow Through NtRAM