5秒后页面跳转
K7N163645A-HC22 PDF预览

K7N163645A-HC22

更新时间: 2024-09-22 15:43:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
28页 631K
描述
ZBT SRAM, 512KX36, 2.8ns, CMOS, PBGA119, BGA-119

K7N163645A-HC22 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:2.8 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B119长度:22 mm
内存密度:18874368 bit内存集成电路类型:ZBT SRAM
内存宽度:36功能数量:1
端子数量:119字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX36封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):2.625 V
最小供电电压 (Vsup):2.375 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
宽度:14 mmBase Number Matches:1

K7N163645A-HC22 数据手册

 浏览型号K7N163645A-HC22的Datasheet PDF文件第2页浏览型号K7N163645A-HC22的Datasheet PDF文件第3页浏览型号K7N163645A-HC22的Datasheet PDF文件第4页浏览型号K7N163645A-HC22的Datasheet PDF文件第5页浏览型号K7N163645A-HC22的Datasheet PDF文件第6页浏览型号K7N163645A-HC22的Datasheet PDF文件第7页 
K7N163645A  
K7N163245A  
K7N161845A  
512Kx36/32 & 1Mx18 Pipelined NtRAMTM  
Document Title  
512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM  
Revision History  
Draft Date  
Remark  
Rev.No.  
History  
Preliminary  
Preliminary  
Preliminary  
Feb. 23. 2001  
May. 10. 2001  
Aug. 30. 2001  
0.0  
0.1  
0.2  
1. Initial document.  
1. Add JTAG Scan Order  
1. Add x32 org and industrial temperature .  
2. Add 165FBGA package  
1. Speed bin merge.  
Preliminary  
Dec. 26. 2001  
0.3  
From K7N1636(32/18)49A to K7N1636(32/18)45A.  
2. AC parameter change.  
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25  
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22  
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20  
Final  
Final  
May. 10. 2002  
May. 22. 2002  
1.0  
2.0  
Final spec release  
Release Icc on page 14.  
part #  
-25  
From  
440  
400  
370  
340  
280  
To  
470  
430  
400  
350  
290  
-22  
-20  
-16  
-13  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
May 2002  
Rev 2.0  
- 1 -  

与K7N163645A-HC22相关器件

型号 品牌 获取价格 描述 数据表
K7N163645A-HI20 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.2ns, CMOS, PBGA119, BGA-119
K7N163645A-HI22 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 2.8ns, CMOS, PBGA119, BGA-119
K7N163645A-Q(F)C(I)13 SAMSUNG

获取价格

512Kx36 & 1Mx18 Pipelined NtRAM
K7N163645A-Q(F)C(I)16 SAMSUNG

获取价格

512Kx36 & 1Mx18 Pipelined NtRAM
K7N163645A-Q(F)C(I)20 SAMSUNG

获取价格

512Kx36 & 1Mx18 Pipelined NtRAM
K7N163645A-Q(F)C(I)25 SAMSUNG

获取价格

512Kx36 & 1Mx18 Pipelined NtRAM
K7N163645A-QC130 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N163645A-QC15 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100
K7N163645A-QC16 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N163645A-QC160 SAMSUNG

获取价格

ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100