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K6T4008U1B-GB100 PDF预览

K6T4008U1B-GB100

更新时间: 2024-11-29 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 145K
描述
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

K6T4008U1B-GB100 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.85Is Samacsys:N
最长访问时间:100 nsJESD-30 代码:R-PDSO-G32
长度:20.47 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:11.43 mmBase Number Matches:1

K6T4008U1B-GB100 数据手册

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K6T4008V1B, K6T4008U1B Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Initial draft  
December 17, 1996  
Januarary 14, 1998  
Preliminary  
Final  
Finalize  
- Change datasheet format  
- Erase low power part from product  
- Erase 70ns part from KM68U4000B family  
- Power dissipation Improved 0.7 to 1.0W  
- VIL(MAX) improved 0.4 to 0.6V.  
- ICC2 decreased 50 to 45mA.  
2.0  
3.0  
Revise  
February 12, 1998  
February 25, 2000  
Final  
Final  
- ICC1 decreased 20 to 25mA  
Revise  
- Adopt new code.  
KM68V4000B ® K6T4008V1B  
KM68U4000B ® K6T4008U1B  
- Improve VOH on D C AND OPERATING CHARACTERISTICS’from  
2.2 to 2.4V.  
4.0  
Revise  
- Add 70ns part to K6T4008V1B-F family  
August 31, 2000  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 3.0  
1
August 2000  

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