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K6T4008U1B-VB10 PDF预览

K6T4008U1B-VB10

更新时间: 2023-01-03 09:16:16
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 145K
描述
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

K6T4008U1B-VB10 数据手册

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K6T4008V1B, K6T4008U1B Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Initial draft  
December 17, 1996  
Januarary 14, 1998  
Preliminary  
Final  
Finalize  
- Change datasheet format  
- Erase low power part from product  
- Erase 70ns part from KM68U4000B family  
- Power dissipation Improved 0.7 to 1.0W  
- VIL(MAX) improved 0.4 to 0.6V.  
- ICC2 decreased 50 to 45mA.  
2.0  
3.0  
Revise  
February 12, 1998  
February 25, 2000  
Final  
Final  
- ICC1 decreased 20 to 25mA  
Revise  
- Adopt new code.  
KM68V4000B ® K6T4008V1B  
KM68U4000B ® K6T4008U1B  
- Improve VOH on D C AND OPERATING CHARACTERISTICS’from  
2.2 to 2.4V.  
4.0  
Revise  
- Add 70ns part to K6T4008V1B-F family  
August 31, 2000  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 3.0  
1
August 2000  

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