Datasheet > K6T4008U1B-MF100

K6T4008U1B-MF100

更新时间： 2024-11-30 08:57:31

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	145K
描述
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32

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K6T4008U1B-MF100 数据手册

K6T4008V1B, K6T4008U1B Family

CMOS SRAM

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

1.0

Initial draft

December 17, 1996

Januarary 14, 1998

Preliminary

Final

Finalize

- Change datasheet format

- Erase low power part from product

- Erase 70ns part from KM68U4000B family

- Power dissipation Improved 0.7 to 1.0W

- VIL(MAX) improved 0.4 to 0.6V.

- ICC2 decreased 50 to 45mA.

2.0

3.0

Revise

February 12, 1998

February 25, 2000

Final

- ICC1 decreased 20 to 25mA

Revise

- Adopt new code.

KM68V4000B ® K6T4008V1B

KM68U4000B ® K6T4008U1B

- Improve VOH on D’ C AND OPERATING CHARACTERISTICS’from

2.2 to 2.4V.

4.0

Revise

- Add 70ns part to K6T4008V1B-F family

August 31, 2000

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 3.0

August 2000

12 3 4 5 6 7...9

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与K6T4008U1B-MF100相关器件

型号	品牌	获取价格	描述	数据表
K6T4008U1B-MF85T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32
K6T4008U1B-VB10	SAMSUNG	获取价格	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
K6T4008U1B-VB850	SAMSUNG	获取价格	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
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