是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SOP, |
针数: | 32 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.85 | 最长访问时间: | 85 ns |
JESD-30 代码: | R-PDSO-G32 | 长度: | 20.47 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 3 mm |
最大供电电压 (Vsup): | 3.3 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 宽度: | 11.43 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6T4008U1B-GF850 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
K6T4008U1B-MB10 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MB85 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MB850 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MF100 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 | |
K6T4008U1B-MF85T | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32 | |
K6T4008U1B-VB10 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | |
K6T4008U1B-VB850 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | |
K6T4008U1B-VF10 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | |
K6T4008U1B-VF85 | SAMSUNG |
获取价格 |
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |