5秒后页面跳转
捷配首页

Datasheet > K4X1G163PC-FGC3T
K4X1G163PC-FGC3T PDF预览

K4X1G163PC-FGC3T

更新时间： 2024-09-28 20:39:43
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
20页 523K
描述
DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60

阅读下载

中文翻译

获取价格

K4X1G163PC-FGC3T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：VFBGA, BGA60,9X10,32
Reach Compliance Code：compliant风险等级：5.84
访问模式：FOUR BANK PAGE BURST最长访问时间：6 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：133 MHz
I/O 类型：COMMON交错的突发长度：2,4,8,16
JESD-30 代码：R-PBGA-B60JESD-609代码：e1
长度：11.5 mm内存密度：1073741824 bit
内存集成电路类型：DDR DRAM内存宽度：16
湿度敏感等级：3功能数量：1
端口数量：1端子数量：60
字数：67108864 words字数代码：64000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-25 °C组织：64MX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：BGA60,9X10,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：260电源：1.8 V
认证状态：Not Qualified刷新周期：8192
座面最大高度：1 mm自我刷新：YES
连续突发长度：2,4,8,16最大待机电流：0.000025 A
子类别：DRAMs最大压摆率：0.135 mA
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：OTHER
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：11 mm
Base Number Matches：1

K4X1G163PC-FGC3T 数据手册

 浏览型号K4X1G163PC-FGC3T的Datasheet PDF文件第2页浏览型号K4X1G163PC-FGC3T的Datasheet PDF文件第3页浏览型号K4X1G163PC-FGC3T的Datasheet PDF文件第4页浏览型号K4X1G163PC-FGC3T的Datasheet PDF文件第5页浏览型号K4X1G163PC-FGC3T的Datasheet PDF文件第6页浏览型号K4X1G163PC-FGC3T的Datasheet PDF文件第7页 
K4X1G163PC - L(F)E/G  
Mobile DDR SDRAM  
64Mx16 Mobile DDR SDRAM  
1. FEATURES  
• VDD/VDDQ = 1.8V/1.8V  
• Double-data-rate architecture; two data transfers per clock cycle  
• Bidirectional data strobe(DQS)  
• Four banks operation  
• Differential clock inputs(CK and CK)  
• MRS cycle with address key programs  
- CAS Latency ( 3 )  
- Burst Length ( 2, 4, 8, 16 )  
- Burst Type (Sequential & Interleave)  
• EMRS cycle with address key programs  
- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )  
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )  
• Internal Temperature Compensated Self Refresh  
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).  
• Data I/O transactions on both edges of data strobe, DM for masking.  
• Edge aligned data output, center aligned data input.  
• No DLL; CK to DQS is not synchronized.  
• LMD, UMD for write masking only.  
• Auto refresh duty cycle  
- 7.8us for -25 to 85 °C  
2. Operating Frequency  
DDR333  
DDR266  
83Mhz  
Speed @CL21)  
83Mhz  
Speed @CL31)  
166Mhz  
133Mhz  
NOTE:  
1) CAS Latency  
3. Address configuration  
Organization  
Bank Address  
Row Address  
Column Address  
64Mx16  
BA0,BA1  
A0 - A13  
A0 - A9  
- DM is internally loaded to match DQ and DQS identically.  
4. Ordering Information  
Part No.  
Max Freq.  
Interface  
LVCMOS  
Package  
K4X1G163PC-L(F)E/GC6  
K4X1G163PC-L(F)E/GC3  
166MHz(CL=3),83MHz(CL=2)  
133MHz(CL=3),83MHz(CL=2)  
60FBGA  
Pb (Pb Free)  
- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)  
- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)  
- C6/C3 : 166MHz(CL=3) / 133MHz(CL=3)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTH-  
ING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY  
INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS"  
BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in  
loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.  
November 2007  
- 4 -  
1234567...20

中文翻译

下载PDF

与K4X1G163PC-FGC3T相关器件

型号 品牌 获取价格 描述 数据表
K4X1G163PC-FGC6 SAMSUNG

获取价格

 		DDR DRAM, 1GX16, CMOS, PBGA60, 11 X 11.50 MM, ROHS COMPLIANT, FBGA-60
K4X1G163PC-FGC60 SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X1G163PC-L SAMSUNG

获取价格

 		Mobile DDR SDRAM
K4X1G163PC-LEC30 SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X1G163PC-LEC60 SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X1G163PC-LEC6T SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60,
K4X1G163PC-LGC30 SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X1G163PC-LGC60 SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X1G163PC-LGC6T SAMSUNG

获取价格

 		DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60,
K4X1G323PC-L SAMSUNG

获取价格

 		32Mx32 Mobile DDR SDRAM

与K4X1G163PC-FGC3T相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证