Datasheet > K4X51163PC-LGCA

K4X51163PC-LGCA

更新时间： 2024-02-08 04:43:47

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率手机
页数	文件大小	规格书
23页	217K
描述
32M x16 Mobile-DDR SDRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4X51163PC-LGCA 数据手册

K4X51163PC - L(F)E/G

Mobile-DDR SDRAM

32M x16 Mobile-DDR SDRAM

FEATURES

• 1.8V power supply, 1.8V I/O power

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• 1 /CS

• 1 CKE

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• Deep Power Down Mode

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• LDM, UDM for write masking only.

• Auto refresh duty cycle

- 7.8us for -25 to 85 °C

Operating Frequency

DDR266

DDR222

66Mhz

Speed @CL2^*1

Speed @CL3^*1

83Mhz

133Mhz

111Mhz

Note :

1. CAS Latency

Address configuration

Organization

Bank

BA0,BA1

Row

Column

32M x16

A0 - A12

A0 - A9

- DM is internally loaded to match DQ and DQS identically.

Ordering Information

Part No.

Max Freq.

Interface

LVCMOS

Package

K4X51163PC-L(F)E/GC3

K4X51163PC-L(F)E/GCA

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),66MHz(CL=2)

60FBGA

Pb (Pb Free)

- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)

- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)

- C3/CA : 133MHz(CL=3) / 111MHz(CL=3)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

February 2006

12 3 4 5 6 7...23

中文翻译

下载PDF

与K4X51163PC-LGCA相关器件

型号	品牌	获取价格	描述	数据表
K4X51163PE	SAMSUNG	获取价格	32Mx16 Mobile DDR SDRAM
K4X51163PE-FEC3T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 6ns, CMOS, PBGA60,
K4X51163PE-FEC6T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,
K4X51163PE-FGC60	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,
K4X51163PE-FGC6000	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,
K4X51163PE-FGC6T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,
K4X51163PE-L	SAMSUNG	获取价格	32Mx16 Mobile DDR SDRAM
K4X51163PE-LEC30	SAMSUNG	获取价格	DDR DRAM, 32MX16, 6ns, CMOS, PBGA60,
K4X51163PG-FGC60	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, HALOGEN AND LEAD FREE, FBGA-60
K4X51163PG-FGC6000	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, HALOGEN AND LEAD FREE, FBGA-60

与K4X51163PC-LGCA相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

11
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

10
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

12
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

15

产品中心

服务支持

精选活动

关于我们

帮助中心

K4X51163PC-LGCA

K4X51163PC-LGCA 数据手册

与K4X51163PC-LGCA相关器件

与K4X51163PC-LGCA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4X51163PC-LGCA

K4X51163PC-LGCA 数据手册

与K4X51163PC-LGCA相关器件

与K4X51163PC-LGCA相关文章

您还可以找

您在本页遇到什么问题？