Datasheet > K4X51163PE-LEC30

K4X51163PE-LEC30

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
20页	534K
描述
DDR DRAM, 32MX16, 6ns, CMOS, PBGA60,

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中文翻译

获取价格

数据手册

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K4X51163PE-LEC30 数据手册

K4X51163PE - L(F)E/G

Mobile DDR SDRAM

32Mx16 Mobile DDR SDRAM

1. FEATURES

• VDD/VDDQ = 1.8V/1.8V

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

• EMRS cycle with address key programs

- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• DM0 - DM3 for write masking only.

• Auto refresh duty cycle

- 7.8us for -25 to 85 °C

2. Operating Frequency

DDR333

DDR266

83Mhz

Speed @CL2¹⁾

83Mhz

Speed @CL3¹⁾

166Mhz

133Mhz

NOTE:

1) CAS Latency

3. Address configuration

Organization

Bank Address

Row Address

Column Address

32Mx16

BA0,BA1

A0 - A12

A0 - A9

- DM is internally loaded to match DQ and DQS identically.

4. Ordering Information

Part No.

Max Freq.

Interface

LVCMOS

Package

K4X51163PE-L(F)E/GC6

K4X51163PE-L(F)E/GC3

166MHz(CL=3),83MHz(CL=2)

133MHz(CL=3),83MHz(CL=2)

60FBGA

Pb (Pb Free)

- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)

- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)

- C6/C3 : 166MHz(CL=3) / 133MHz(CL=3)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTH-

ING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY

INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS"

BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in

loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.

June 2007

- 4 -

12 3 4 5 6 7...20

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与K4X51163PE-LEC30相关器件

型号	品牌	获取价格	描述	数据表
K4X51163PG-FGC60	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, HALOGEN AND LEAD FREE, FBGA-60
K4X51163PG-FGC6000	SAMSUNG	获取价格	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, HALOGEN AND LEAD FREE, FBGA-60
K4X51323PC-7E	SAMSUNG	获取价格	16M x32 Mobile-DDR SDRAM
K4X51323PC-7EC3	SAMSUNG	获取价格	16M x32 Mobile-DDR SDRAM
K4X51323PC-7EC3T	SAMSUNG	获取价格	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90
K4X51323PC-7ECA	SAMSUNG	获取价格	16M x32 Mobile-DDR SDRAM
K4X51323PC-7ECAT	SAMSUNG	获取价格	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90
K4X51323PC-7GC3	SAMSUNG	获取价格	16M x32 Mobile-DDR SDRAM
K4X51323PC-7GC30	SAMSUNG	获取价格	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90
K4X51323PC-7GC3T	SAMSUNG	获取价格	暂无描述

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