生命周期: | Obsolete | 包装说明: | FBGA, BGA96,9X16,32 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 0.255 ns | 最大时钟频率 (fCLK): | 667 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 4,8 |
JESD-30 代码: | R-PBGA-B96 | 内存密度: | 2147483648 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
端子数量: | 96 | 字数: | 134217728 words |
字数代码: | 128000000 | 最高工作温度: | 85 °C |
最低工作温度: | 组织: | 128MX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA96,9X16,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 4,8 |
最大待机电流: | 0.01 A | 子类别: | DRAMs |
最大压摆率: | 0.173 mA | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4W2G1646E-BC150 | SAMSUNG |
获取价格 |
DDR SRAM, 128MX16, CMOS, PBGA96, FBGA-96 |
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K4W2G1646E-BC1A0 | SAMSUNG |
获取价格 |
DDR SRAM, 128MX16, CMOS, PBGA96, FBGA-96 |
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K4X1G163PC-FEC30 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60 |
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K4X1G163PC-FEC3T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, |
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K4X1G163PC-FEC60 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60, LEAD FREE, FBGA-60 |
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K4X1G163PC-FEC6T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 5.5ns, CMOS, PBGA60, |
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K4X1G163PC-FGC3 | SAMSUNG |
获取价格 |
DDR DRAM, 1GX16, CMOS, PBGA60, 11 X 11.50 MM, ROHS COMPLIANT, FBGA-60 |
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K4X1G163PC-FGC30 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60 |
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K4X1G163PC-FGC3T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60 |
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K4X1G163PC-FGC6 | SAMSUNG |
获取价格 |
DDR DRAM, 1GX16, CMOS, PBGA60, 11 X 11.50 MM, ROHS COMPLIANT, FBGA-60 |
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