Datasheet > K4S561632E-NL75

K4S561632E-NL75

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
14页	121K
描述
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54

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K4S561632E-NL75 数据手册

CMOS SDRAM

SDRAM 256Mb E-die (x4, x8, x16)

256Mb E-die SDRAM Specification

54pin sTSOP-II

Revision 1.0

August. 2003

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.0 August, 2003

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
K4S561632E-TC60	SAMSUNG	获取价格	256Mb E-die SDRAM Specification
K4S561632E-TC75	SAMSUNG	获取价格	256Mb E-die SDRAM Specification
K4S561632E-TC75T00	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54
K4S561632E-TL60	SAMSUNG	获取价格	256Mb E-die SDRAM Specification
K4S561632E-TL75	SAMSUNG	获取价格	256Mb E-die SDRAM Specification
K4S561632E-UC60	SAMSUNG	获取价格	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UC600	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE,
K4S561632E-UC75	SAMSUNG	获取价格	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UC750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FRE
K4S561632E-UC75T	SAMSUNG	获取价格	暂无描述