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K4S561632E-UL750 PDF预览

K4S561632E-UL750

更新时间: 2024-11-11 18:59:43
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 198K
描述
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

K4S561632E-UL750 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.15
访问模式:FOUR BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G54
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
湿度敏感等级:2功能数量:1
端口数量:1端子数量:54
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:10.16 mmBase Number Matches:1

K4S561632E-UL750 数据手册

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CMOS SDRAM  
SDRAM 256Mb E-die (x4, x8, x16)  
256Mb E-die SDRAM Specification  
54 TSOP-II with Pb-Free  
(RoHS compliant)  
Revision 1.3  
August 2004  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.3 August 2004  

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