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K4S561632D-NC1L0 PDF预览

K4S561632D-NC1L0

更新时间: 2024-11-11 19:03:35
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 46K
描述
Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, STSOP2-54

K4S561632D-NC1L0 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G54内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

K4S561632D-NC1L0 数据手册

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K4S561632D  
CMOS SDRAM  
256Mbit SDRAM  
4M x 16bit x 4 Banks  
Synchronous DRAM  
LVTTL  
Revision 0.0  
May. 2002  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 0.1 Aug. 2002  

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Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54
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Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, STSOP2-54
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Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, STSOP2-54
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Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54
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Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, STSOP2-54
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Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54
K4S561632D-NL1L0 SAMSUNG

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Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, STSOP2-54
K4S561632D-NL60 SAMSUNG

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Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.300 X 0.551 INCH, 0.50 MM PITCH, STSOP2-54
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Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, STSOP2-54