是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, |
针数: | 90 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.84 | Is Samacsys: | N |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 7 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B90 |
长度: | 13 mm | 内存密度: | 134217728 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 90 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | -25 °C | 组织: | 4MX32 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S283233F-HL600 | SAMSUNG |
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Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4S283233F-HL75 | SAMSUNG |
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Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90 | |
K4S283233F-HN1H0 | SAMSUNG |
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Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4S283233F-HN1L | SAMSUNG |
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Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90 | |
K4S283233F-HN1L0 | SAMSUNG |
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Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4S283233F-HN600 | SAMSUNG |
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Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4S283233F-HN750 | SAMSUNG |
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Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4S283233F-L | SAMSUNG |
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1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA | |
K4S283233F-ME75 | SAMSUNG |
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Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, FBGA-90 | |
K4S283233F-MI1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 |