是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 5.4 ns | 最大时钟频率 (fCLK): | 167 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PBGA-B90 | 内存密度: | 134217728 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
端子数量: | 90 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 4MX32 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA90,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 2.5 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.0005 A | 子类别: | DRAMs |
最大压摆率: | 0.17 mA | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S28323LE-DE750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | |
K4S28323LE-DL1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | |
K4S28323LE-DL1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90 | |
K4S28323LE-DL1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | |
K4S28323LE-DL60 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90 | |
K4S28323LE-DN1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | |
K4S28323LE-DN60 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90 | |
K4S28323LE-DN750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | |
K4S28323LE-DR1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | |
K4S28323LE-DR1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90 |