Datasheet > K4P170411C-F5000

K4P170411C-F5000

更新时间： 2024-11-23 20:04:15

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
20页	396K
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中文翻译

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数据手册

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K4P170411C-F5000 数据手册

K4P170411C, K4P160411C

CMOS DRAM

4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access

of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low

power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only

refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. Four separate CAS pins provide for

seperate I/O operation allowing this device to operate in parity mode.

This 4Mx4 Fast Page Mode Quad CAS DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-

width, low power consumption and high reliability.

FEATURES

• Fast Page Mode operation

• Four seperate CAS pins provide for separate I/O operation

• Part Identification

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast paralleltest mode capability

- K4P170411C-B(F) (5V, 4K Ref.)

- K4P160411C-B(F) (5V, 2K Ref.)

• TTL compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

Refresh Cycle

Speed

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply

-50

-60

495

440

605

550

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh period

RAS

CAS0 - 3

Vcc

Vss

Control

Clocks

Normal

L-ver

VBB Generator

K4P170411C

K4P160411C

64ms

32ms

128ms

Data in

Buffer

Row Decoder

Refresh Timer

Refresh Control

DQ0

DQ3

Memory Array

4,194,304 x 4

Cells

• Performance Range

Refresh Counter

Row Address Buffer

Col. Address Buffer

Speed

-50

Remark

tRAC

50ns

60ns

tCAC

tRC

90ns

tPC

A0-A11

(A0 - A10)*1

A0 - A9

13ns

35ns 5V/3.3V

Data out

Buffer

Column Decoder

-60

15ns 110ns 40ns 5V/3.3V

(A0 - A10)*1

Note) *1 : 2K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

中文翻译

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与K4P170411C-F5000相关器件

型号	品牌	获取价格	描述	数据表
K4P170411C-FC50	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4P170411C-FC500	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4P170411C-FC60	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4P170411C-FC600	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4P170411C-FL50	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4P170411C-FL60	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4PE68A	TSC	获取价格	Transient Voltage Suppressor Diodes
K4PE68A	LGE	获取价格	400 Watts Transient Voltage Suppressor Diodes
K4Q153211M-JC	SAMSUNG	获取价格	DRAM
K4Q153211M-JC50	SAMSUNG	获取价格	EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70

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