Datasheet > K4PE68A

K4PE68A

更新时间： 2024-11-19 03:46:59

品牌	Logo	应用领域
TSC		二极管
页数	文件大小	规格书
4页	91K
描述
Transient Voltage Suppressor Diodes

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中文翻译

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技术参数
数据手册

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K4PE68A 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	Is Samacsys：	N
Base Number Matches：	1

K4PE68A 数据手册

P4KE SERIES

Transient Voltage Suppressor Diodes

Voltage Range

6.8 to 440 Volts

400 Watts Peak Power

DO-41

Features

ꢀ

UL Recognized File # E-96005

Plastic package has Underwriters Laboratory Flammability

ꢀ

Classification 94V-0

ꢀ

400W surge capability at 10 x 100us waveform, duty cycle:

0.01%

ꢀ

Excellent clamping capability

Low zener impedance

Fast response time: Typically less than 1.0ps from 0 volts to

VBR for unidirectional and 5.0 ns for bidirectional

Typical I_Rless than 1 uA above 10V

High temperature soldering guaranteed: 260°C / 10 seconds

/ .375”,(9.5mm) lead length / 5lbs.,(2.3kg) tension

ꢀ

Mechanical Data

ꢀ

Case: Molded plastic

ꢀ

Lead: Axial leads, solderable per MIL-STD-

202, Method 208

ꢀ

Polarity: Color band denotes cathode except bipolar

Weight: 0.012 ounce,0.3 gram

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol

Value

Units

Peak Power Dissipation at T_A=25°C, Tp=1ms

(Note 1)

P_PK

Minimum 400

Watts

Steady State Power Dissipation at T_L=75°C

Lead Lengths .375”, 9.5mm (Note 2)

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load

(JEDEC method) (Note 3)

P_D

1.0

Watts

Amps

I_FSM

40.0

Maximum Instantaneous Forward Voltage at

25.0A for Unidirectional Only (Note 4)

V_F

3.5 / 6.5

Volts

°C

Operating and Storage Temperature Range

T_J, T_STG

-55 to + 175

Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T_A=25^OC Per Fig. 2.

Notes: 2. Mounted on Copper Pad Area of 1.6 x 1.6” (40 x 40 mm) Per Fig. 4.

Notes: 3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes

Notes: 3. Maximum.

≤

Notes: 4. V_F=3.5V for Devices of V_BR200V and V_F=6.5V Max. for Devices V_BR>200V.

Devices for Bipolar Applications

Notes: 1. For Bidirectional Use C or CA Suffix for Types P4KE6.8 thru Types P4KE440.

Notes: 2. Electrical Characteristics Apply in Both Directions.

- 628 -

12 3 4

中文翻译

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与K4PE68A相关器件

型号	品牌	获取价格	描述	数据表
K4Q153211M-JC	SAMSUNG	获取价格	DRAM
K4Q153211M-JC50	SAMSUNG	获取价格	EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
K4Q153211M-JC60	SAMSUNG	获取价格	EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
K4Q153211M-JL50	SAMSUNG	获取价格	EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
K4Q153211M-JL60	SAMSUNG	获取价格	EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
K4Q153212M-JC	SAMSUNG	获取价格	DRAM
K4Q153212M-JC50	SAMSUNG	获取价格	EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
K4Q153212M-JC60	SAMSUNG	获取价格	EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
K4Q153212M-JL	SAMSUNG	获取价格	DRAM
K4Q153212M-JL50	SAMSUNG	获取价格	EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70

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