K4M64163LK - R(B)N/G/L/F
Mobile-SDRAM
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES
GENERAL DESCRIPTION
• 2.5V power supply.
The K4M64163LK is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Balls FBGA( -RXXX -Pb, -BXXX -Pb Free).
ORDERING INFORMATION
Part No.
Max Freq.
Interface
Package
K4M64163LK-R(B)N/G/L/F75
K4M64163LK-R(B)N/G/L/F1H
K4M64163LK-R(B)N/G/L/F1L
133MHz(CL=3),111MHz(CL=2)
111MHz(CL=2)
54 FBGA Pb
(Pb Free)
LVCMOS
111MHz(CL=3)*1,83MHz(CL=2)
- R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)
- R(B)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur
pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
1
January 2006