Datasheet > K4M64163LK-RF1H0

K4M64163LK-RF1H0

更新时间： 2023-02-26 14:05:34

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	113K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54

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K4M64163LK-RF1H0 数据手册

K4M64163LK - R(B)N/G/L/F

Mobile-SDRAM

C. BURST SEQUENCE

1. BURST LENGTH = 4

Initial Address

Sequential

Interleave

2. BURST LENGTH = 8

Initial Address

Sequential

Interleave

January 2006

1...9 10 1112

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型号	品牌	获取价格	描述	数据表
K4M64163LK-RF1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163LK-RF1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54
K4M64163LK-RF75	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M64163LK-RF750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, FBGA-54
K4M64163LK-RF75T	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M64163LK-RG1H0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54
K4M64163LK-RG1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54
K4M64163LK-RG75	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M64163LK-RG750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, FBGA-54
K4M64163LK-RL1H	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54