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K4M51163LC-BG750 PDF预览

K4M51163LC-BG750

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器
页数 文件大小 规格书
12页 113K
描述
Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54

K4M51163LC-BG750 数据手册

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K4M51163LC - R(B)N/G/L/F  
Mobile SDRAM  
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA  
FEATURES  
GENERAL DESCRIPTION  
• VDD/VDDQ = 2.5V/2.5V  
The K4M51163LC is 536,870,912 bits synchronous high data  
rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,  
fabricated with SAMSUNG's high performance CMOS technol-  
ogy. Synchronous design allows precise cycle control with the  
use of system clock and I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst length and programmable latencies allow the same device  
to be useful for a variety of high bandwidth, high performance  
memory system applications.  
• LVCMOS compatible with multiplexed address.  
• Four banks operation.  
• MRS cycle with address key programs.  
-. CAS latency (1, 2 & 3).  
-. Burst length (1, 2, 4, 8 & Full page).  
-. Burst type (Sequential & Interleave).  
• EMRS cycle with address key programs.  
• All inputs are sampled at the positive going edge of the system  
clock.  
• Burst read single-bit write operation.  
• Special Function Support.  
-. PASR (Partial Array Self Refresh).  
-. Internal TCSR (Temperature Compensated Self Refresh)  
• DQM for masking.  
• Auto refresh.  
• 64ms refresh period (8K cycle).  
• Commercial Temperature Operation (-25°C ~ 70°C).  
• Extended Temperature Operation (-25°C ~ 85°C).  
• 1 /CS Support.  
• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).  
ORDERING INFORMATION  
Part No.  
Max Freq.  
Interface  
Package  
K4M51163LC-R(B)N/G/L/F75  
K4M51163LC-R(B)N/G/L/F1H  
K4M51163LC-R(B)N/G/L/F1L  
133MHz(CL3), 111MHz(CL2)  
111MHz(CL2)  
54 FBGA Pb  
(Pb Free)  
LVCMOS  
111MHz(CL=3)*1, 83MHz(CL2)  
- R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)  
- R(B)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)  
NOTES :  
1. In case of 40MHz Frequency, CL1 can be supported.  
Address configuration  
Organization  
Bank  
Row  
Column Address  
32M x16  
BA0,BA1  
A0 - A12  
A0 - A9  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-  
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could  
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-  
visions may apply.  
1
March 2006  

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