是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA54,9X9,32 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 7 ns |
最大时钟频率 (fCLK): | 111 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | S-PBGA-B54 |
内存密度: | 536870912 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 端子数量: | 54 |
字数: | 33554432 words | 字数代码: | 32000000 |
最高工作温度: | 70 °C | 最低工作温度: | -25 °C |
组织: | 32MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA54,9X9,32 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 2.5 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.001 A |
子类别: | DRAMs | 最大压摆率: | 0.18 mA |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4M51163LC-RF1H0 | SAMSUNG |
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Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | |
K4M51163LC-RF1HT | SAMSUNG |
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Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 | |
K4M51163LC-RF1L | SAMSUNG |
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8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4M51163LC-RF1L0 | SAMSUNG |
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Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 | |
K4M51163LC-RF1LT | SAMSUNG |
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Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 | |
K4M51163LC-RF75 | SAMSUNG |
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8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4M51163LC-RF750 | SAMSUNG |
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Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, FBGA-54 | |
K4M51163LC-RF75T | SAMSUNG |
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Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54 | |
K4M51163LC-RG1H | SAMSUNG |
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8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4M51163LC-RG1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 |