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K4H510838F-LLCC PDF预览

K4H510838F-LLCC

更新时间: 2024-11-16 05:49:35
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
24页 361K
描述
DDR DRAM, 64MX8, 0.65ns, CMOS, PDSO66

K4H510838F-LLCC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:66
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.83
访问模式:FOUR BANK PAGE BURST最长访问时间:0.65 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G66
长度:22.22 mm内存密度:536870912 bit
内存集成电路类型:DDR DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:66字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

K4H510838F-LLCC 数据手册

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K4H510438F  
K4H510838F  
K4H511638F  
DDR SDRAM  
512Mb F-die DDR SDRAM Specification  
66 TSOP-II  
with Lead-Free and Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.1 November 2008  
1 of 24  

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