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K4H510438D-UCB0T PDF预览

K4H510438D-UCB0T

更新时间: 2024-02-16 09:30:39
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
24页 369K
描述
Cache DRAM Module, 128MX4, 0.75ns, CMOS, PDSO66

K4H510438D-UCB0T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:TSSOP, TSSOP66,.46
Reach Compliance Code:compliant风险等级:5.56
最长访问时间:0.75 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMON交错的突发长度:2,4,8
JESD-30 代码:R-PDSO-G66JESD-609代码:e3
内存密度:536870912 bit内存集成电路类型:CACHE DRAM MODULE
内存宽度:4湿度敏感等级:1
端子数量:66字数:134217728 words
字数代码:128000000最高工作温度:70 °C
最低工作温度:组织:128MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP66,.46
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):225电源:2.5 V
认证状态:Not Qualified刷新周期:8192
连续突发长度:2,4,8最大待机电流:0.005 A
子类别:DRAMs最大压摆率:0.325 mA
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

K4H510438D-UCB0T 数据手册

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K4H510438D  
K4H510838D  
K4H511638D  
DDR SDRAM  
512Mb D-die DDR SDRAM Specification  
66 TSOP-II with Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.2 January 2006  

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