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K4F171611C-TL600 PDF预览

K4F171611C-TL600

更新时间: 2024-10-31 20:52:51
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
34页 894K
描述
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44

K4F171611C-TL600 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP44/50,.46,32
针数:50Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92访问模式:FAST PAGE
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:20.95 mm内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:16
湿度敏感等级:1功能数量:1
端口数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44/50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.2 mm自我刷新:YES
最大待机电流:0.0002 A子类别:DRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

K4F171611C-TL600 数据手册

 浏览型号K4F171611C-TL600的Datasheet PDF文件第2页浏览型号K4F171611C-TL600的Datasheet PDF文件第3页浏览型号K4F171611C-TL600的Datasheet PDF文件第4页浏览型号K4F171611C-TL600的Datasheet PDF文件第5页浏览型号K4F171611C-TL600的Datasheet PDF文件第6页浏览型号K4F171611C-TL600的Datasheet PDF文件第7页 
K4F171611C, K4F151611C  
K4F171612C, K4F151612C  
CMOS DRAM  
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode  
DESCRIPTION  
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory  
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power  
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-  
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This  
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power  
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.  
FEATURES  
• Part Identification  
• Fast Page Mode operation  
• 2 CAS Byte/Word Read/Write operation  
• CAS-before-RAS refresh capability  
- K4F171611C-J(T) (5V, 4K Ref.)  
• RAS-only and Hidden refresh capability  
- K4F151611C-J(T) (5V, 1K Ref.)  
• Self-refresh capability (L-ver only)  
- K4F171612C-J(T) (3.3V, 4K Ref.)  
- K4F151612C-J(T) (3.3V, 1K Ref.)  
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs  
• Early Write or output enable controlled write  
• JEDEC Standard pinout  
Active Power Dissipation  
Unit : mW  
5V  
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)  
3.3V  
Speed  
400mil packages  
• Single +5V±10% power supply (5V product)  
4K  
1K  
4K  
495  
440  
1K  
-50  
-60  
324  
288  
504  
468  
770  
715  
• Single +3.3V±0.3V power supply (3.3V product)  
FUNCTIONAL BLOCK DIAGRAM  
Refresh Cycles  
Part  
NO.  
Refresh Refresh period  
VCC  
RAS  
UCAS  
LCAS  
W
Vcc  
Vss  
cycle  
Normal  
L-ver  
Control  
Clocks  
VBB Generator  
K4F171611C  
5V  
4K  
64ms  
K4F171612C 3.3V  
K4F151611C 5V  
Lower  
Data in  
Buffer  
128ms  
DQ0  
to  
DQ7  
Row Decoder  
Refresh Timer  
Refresh Control  
1K  
16ms  
K4F151612C 3.3V  
Lower  
Data out  
Buffer  
Memory Array  
1,048,576 x16  
Cells  
OE  
Refresh Counter  
Row Address Buffer  
Col. Address Buffer  
Upper  
Data in  
Buffer  
Perfomance Range  
A0-A11  
(A0 - A9)*1  
A0 - A7  
DQ8  
to  
DQ15  
Speed  
-50  
Remark  
tRAC  
50ns  
60ns  
tCAC  
tRC  
tPC  
Upper  
Data out  
Buffer  
15ns  
90ns  
35ns 5V/3.3V  
Column Decoder  
(A0 - A9)*1  
-60  
15ns 110ns 40ns 5V/3.3V  
Note) *1 : 1K Refresh  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  

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