Datasheet > K4F171612C-JC50

K4F171612C-JC50

更新时间： 2024-11-01 04:58:03

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
34页	894K
描述
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42

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K4F171612C-JC50 数据手册

K4F171611C, K4F151611C

K4F171612C, K4F151612C

CMOS DRAM

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power

consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-

before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This

1Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

FEATURES

• Part Identification

• Fast Page Mode operation

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

- K4F171611C-J(T) (5V, 4K Ref.)

• RAS-only and Hidden refresh capability

- K4F151611C-J(T) (5V, 1K Ref.)

• Self-refresh capability (L-ver only)

- K4F171612C-J(T) (3.3V, 4K Ref.)

- K4F151612C-J(T) (3.3V, 1K Ref.)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)

3.3V

Speed

400mil packages

• Single +5V±10% power supply (5V product)

495

440

-50

-60

324

288

504

468

770

715

• Single +3.3V±0.3V power supply (3.3V product)

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

Refresh Refresh period

VCC

RAS

UCAS

LCAS

Vcc

Vss

cycle

Normal

L-ver

Control

Clocks

VBB Generator

K4F171611C

64ms

K4F171612C 3.3V

K4F151611C 5V

Lower

Data in

Buffer

128ms

DQ0

DQ7

Row Decoder

Refresh Timer

Refresh Control

16ms

K4F151612C 3.3V

Lower

Data out

Buffer

Memory Array

1,048,576 x16

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

• Perfomance Range

A0-A11

(A0 - A9)*1

A0 - A7

DQ8

DQ15

Speed

-50

Remark

tRAC

50ns

60ns

tCAC

tRC

tPC

Upper

Data out

Buffer

15ns

90ns

35ns 5V/3.3V

Column Decoder

(A0 - A9)*1

-60

15ns 110ns 40ns 5V/3.3V

Note) *1 : 1K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...34

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与K4F171612C-JC50相关器件

型号	品牌	获取价格	描述	数据表
K4F171612C-JC500	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
K4F171612C-JC50T	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42,
K4F171612C-JC60	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
K4F171612C-JC600	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
K4F171612C-JL50	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
K4F171612C-JL500	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
K4F171612C-JL50T	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42,
K4F171612C-JL600	SAMSUNG	获取价格	暂无描述
K4F171612C-JL60T	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42,
K4F171612C-TC50	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44

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