Datasheet > K4F151612D-J50

K4F151612D-J50

更新时间： 2024-01-30 03:36:12

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
34页	352K
描述
DRAM

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数据手册

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K4F151612D-J50 数据手册

K4F171611D, K4F151611D

K4F171612D, K4F151612D

CMOS DRAM

AC CHARACTERISTICS (Continued)

-50

-60

Parameter

Symbol

Units

Notes

Min

Max

Min

Max

Data set-up time

Data hold time

9,17

tD S

tDH

Refresh period (1K, Normal)

Refresh period (4K, Normal)

Refresh period (L-ver)

tREF

tWCS

tCWD

tRWD

tAWD

tCPWD

tCSR

tCHR

tRPC

tCPA

128

Write command set-up time

7,13

CAS to W delay time

RAS to W delay time

Column address to W delay time

CAS precharge to W delay time

CAS set-up time (CAS-before-RAS refresh)

CAS hold time (CAS-before-RAS refresh)

RAS to CAS precharge time

Access time from CAS precharge

Fast Page mode cycle time

tPC

Fast Page read-modify-write cycle time

CAS precharge time (Fast Page cycle)

RAS pulse width (Fast Page cycle)

RAS hold time from CAS precharge

OE access time

tPRWC

tC P

200K

tRASP

tRHCP

tOEA

tOED

tOEZ

tOEH

tRASS

tRPS

tCHS

OE to data delay

Output buffer turn off delay time from OE

OE command hold time

100

-50

RAS pulse width (C-B-R self refresh)

RAS precharge time (C-B-R self refresh)

CAS hold time (C-B-R self refresh)

100

110

-50

18,19,20

1...3 4 567 8 9...34

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