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K4F160411D-BL600 PDF预览

K4F160411D-BL600

更新时间: 2024-01-27 02:18:45
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 225K
描述
Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

K4F160411D-BL600 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:24
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.35
访问模式:FAST PAGE最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHJESD-30 代码:R-PDSO-J24
长度:17.155 mm内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX4封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:4.45 mm自我刷新:YES
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:7.62 mm
Base Number Matches:1

K4F160411D-BL600 数据手册

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K4F170411D, K4F160411D  
K4F170412D, K4F160412D  
CMOS DRAM  
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode  
DESCRIPTION  
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells  
within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power con-  
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-  
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.  
This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power  
consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer.  
FEATURES  
• Part Identification  
• Fast Page Mode operation  
• CAS-before-RAS refresh capability  
• RAS-only and Hidden refresh capability  
- K4F170411D-B(F) (5V, 4K Ref.)  
• Self-refresh capability (L-ver only)  
- K4F160411D-B(F) (5V, 2K Ref.)  
• Fast parallel test mode capability  
- K4F170412D-B(F) (3.3V, 4K Ref.)  
- K4F160412D-B(F) (3.3V, 2K Ref.)  
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs  
• Early Write or output enable controlled write  
• JEDEC Standard pinout  
Active Power Dissipation  
Unit : mW  
5V  
• Available in Plastic SOJ and TSOP(II) packages  
• Single +5V±10% power supply (5V product)  
• Single +3.3V±0.3V power supply (3.3V product)  
3.3V  
Speed  
4K  
2K  
396  
360  
4K  
2K  
-50  
-60  
324  
288  
495  
440  
605  
550  
FUNCTIONAL BLOCK DIAGRAM  
Refresh Cycles  
Part  
Refresh  
cycle  
Refresh period  
VCC  
RAS  
CAS  
W
Vcc  
Vss  
Control  
Clocks  
NO.  
Normal  
L-ver  
VBB Generator  
K4F170411D  
5V  
4K  
2K  
64ms  
K4F170412D 3.3V  
K4F160411D 5V  
Data in  
128ms  
Buffer  
Row Decoder  
Refresh Timer  
Refresh Control  
Refresh Counter  
32ms  
tPC  
K4F160412D 3.3V  
DQ0  
to  
DQ3  
Memory Array  
4,194,304 x 4  
Cells  
Performance Range  
A0-A11  
(A0 - A10)*1  
A0 - A9  
Row Address Buffer  
Col. Address Buffer  
Speed  
-50  
Remark  
tRAC  
50ns  
60ns  
tCAC  
tRC  
Data out  
Buffer  
13ns  
90ns  
35ns 5V/3.3V  
Column Decoder  
OE  
(A0 - A10)*1  
-60  
15ns 110ns 40ns 5V/3.3V  
Note) *1 : 2K Refresh  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  

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