Datasheet > K4F151612D-J50

K4F151612D-J50

更新时间： 2024-01-18 18:28:25

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
34页	352K
描述
DRAM

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中文翻译

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数据手册

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K4F151612D-J50 数据手册

K4F171611D, K4F151611D

K4F171612D, K4F151612D

CMOS DRAM

DC AND OPERATING CHARACTERISTICS (Continued)

Max

Symbol

Power

Speed

Units

K4F171612D

K4F151612D

K4F171611D

K4F151611D

-50

-60

140

130

140

130

ICC1

ICC2

ICC3

ICC4

ICC5

ICC6

Don¢t care

Normal

Don¢t care

-50

-60

140

130

140

130

Don¢t care

-50

-60

Normal

0.5

200

0.5

200

Don¢t care

-50

-60

140

130

140

130

Don¢t care

ICC7

ICCS

Don¢t care

300

150

200

150

350

200

250

200

ICC1* : Operating Current (RAS and UCAS, LCAS cycling @tRC=min.)

ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)

ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS cycling @tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL , UCAS or LCAS, Address cycling @tPC=min.)

ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,

DQ=Don¢t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver),

TRAS=TRASmin~300ns

ICCS : Self Refresh Current

RAS=UCAS=LCAS=VIL , W=OE=A0 ~ A11=VCC-0.2V or 0.2V,

DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL . In ICC4,

address can be changed maximum once within one fast page mode cycle time, tPC .

1 2 345 6 7...34

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