Datasheet > K4F160411D-BC600

K4F160411D-BC600

更新时间： 2024-01-22 13:35:51

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	225K
描述
Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

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K4F160411D-BC600 数据手册

K4F170411D, K4F160411D

K4F170412D, K4F160412D

CMOS DRAM

4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells

within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power con-

sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-

before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer.

FEATURES

• Part Identification

• Fast Page Mode operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

- K4F170411D-B(F) (5V, 4K Ref.)

• Self-refresh capability (L-ver only)

- K4F160411D-B(F) (5V, 2K Ref.)

• Fast parallel test mode capability

- K4F170412D-B(F) (3.3V, 4K Ref.)

- K4F160412D-B(F) (3.3V, 2K Ref.)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)

3.3V

Speed

396

360

-50

-60

324

288

495

440

605

550

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

Refresh

cycle

Refresh period

VCC

RAS

CAS

Vcc

Vss

Control

Clocks

NO.

Normal

L-ver

VBB Generator

K4F170411D

64ms

K4F170412D 3.3V

K4F160411D 5V

Data in

128ms

Buffer

Row Decoder

Refresh Timer

Refresh Control

Refresh Counter

32ms

tPC

K4F160412D 3.3V

DQ0

DQ3

Memory Array

4,194,304 x 4

Cells

• Performance Range

A0-A11

(A0 - A10)*1

A0 - A9

Row Address Buffer

Col. Address Buffer

Speed

-50

Remark

tRAC

50ns

60ns

tCAC

tRC

Data out

Buffer

13ns

90ns

35ns 5V/3.3V

Column Decoder

(A0 - A10)*1

-60

15ns 110ns 40ns 5V/3.3V

Note) *1 : 2K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

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与K4F160411D-BC600相关器件

型号	品牌	描述	获取价格	数据表
K4F160411D-BL500	SAMSUNG	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24	获取价格
K4F160411D-BL600	SAMSUNG	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24	获取价格
K4F160411D-FC500	SAMSUNG	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	获取价格
K4F160411D-FC600	SAMSUNG	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	获取价格
K4F160411D-FL60	SAMSUNG	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	获取价格
K4F160411D-FL600	SAMSUNG	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24	获取价格