Datasheet > K4E660811D-JC500

K4E660811D-JC500

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
21页	413K
描述
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, SOJ-32

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4E660811D-JC500 数据手册

K4E660811D,K4E640811D

AC CHARACTERISTICS (Continued)

Parameter

CMOS DRAM

-50

-60

Symbol

Units

Note

Min

Max

Min

Max

Data hold time

tDH

Refresh period (4K, Normal)

Refresh period (8K, Normal)

Write command set-up time

tREF

tWCS

tCWD

tRWD

tAWD

tCSR

tCHR

tRPC

tCPA

tHPC

tHPRWC

tCP

CAS to W delay time

RAS to W delay time

Column address to W delay time

CAS set-up time (CAS -before-RAS refresh)

CAS hold time (CAS -before-RAS refresh)

RAS to CAS precharge time

Access time from CAS precharge

Hyper Page cycle time

Hyper Page read-modify-write cycle time

CAS precharge time (Hyper page cycle)

RAS pulse width (Hyper page cycle)

RAS hold time from CAS precharge

OE access time

200K

tRASP

tRHCP

tOEA

tOED

tCPWD

tOEZ

tOEH

tWTS

tWTH

tWRP

tWRH

tDOH

tREZ

OE to data delay

CAS precharge to W delay time

Output buffer turn off delay time from OE

OE command hold time

Write command set-up time (Test mode in)

Write command hold time (Test mode in)

W to RAS precharge time (C-B-R refresh)

W to RAS hold time (C-B-R refresh)

Output data hold time

Output buffer turn off delay from RAS

Output buffer turn off delay from W

W to data delay

6,14

tWEZ

tWED

tOCH

tCHO

tOEP

tWPE

tRASS

tRPS

tCHS

OE to CAS hold time

CAS hold time to OE

OE precharge time

W pulse width (Hyper page cycle)

RAS pulse width (C-B-R self refresh)

RAS precharge time (C-B-R self refresh)

CAS hold time (C-B-R self refresh)

100

-50

100

110

-50

15,16,17

1...3 4 567 8 9...21

下载PDF

与K4E660811D-JC500相关器件

型号	品牌	描述	获取价格	数据表
K4E660811D-TC600	SAMSUNG	EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, TSOP2-32	获取价格
K4E660812B	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out	获取价格
K4E660812B-TC450	SAMSUNG	EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32	获取价格
K4E660812B-TC600	SAMSUNG	EDO DRAM, 8MX8, 65ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32	获取价格
K4E660812C	SAMSUNG	8M x 8bit CMOS Dynamic RAM with Extended Data Out	获取价格
K4E660812C-JC450	SAMSUNG	EDO DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32	获取价格