Datasheet > K4E660811D-JC500

K4E660811D-JC500

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
21页	413K
描述
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, SOJ-32

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K4E660811D-JC500 数据手册

K4E660811D,K4E640811D

CMOS DRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

VIN,VOUT

VCC

Rating

-1.0 to +7.0

-55 to +150

Units

Voltage on any pin relative to VSS

Voltage on VCC supply relative to VSS

Storage Temperature

Tstg

°C

Power Dissipation

Short Circuit Output Current

IOS Address

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)

Parameter

Supply Voltage

Symbol

VCC

VSS

Min

4.5

Typ

Max

5.5

Units

5.0

Ground

Input High Voltage

Input Low Voltage

VIH

2.6

VCC+1.0

0.7

VIL

-1.0

*1 : VCC+2.0V at pulse width£20ns which is measured at VCC

*2 : -2.0 at pulse width£20ns which is measured at VSS

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Parameter

Symbol

Min

Max

Units

Input Leakage Current (Any input 0£VIN£VCC+0.5V,

all other pins not under test=0 Volt)

II(L)

-5

Output Leakage Current

(Data out is disabled, 0V£VOUT£VCC)

IO(L)

-5

Output High Voltage Level(IOH=-5mA)

Output Low Voltage Level(IOL=4.2mA)

VOH

VOL

2.4

0.4

1 234 5 6 7...21

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