Datasheet > K4E660811D-JC500

K4E660811D-JC500

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
21页	413K
描述
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, SOJ-32

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K4E660811D-JC500 数据手册

K4E660811D,K4E640811D

CMOS DRAM

DC AND OPERATING CHARACTERISTICS (Continued)

Max

Symbol

Power

Speed

Units

K4E660811D

K4E640811D

-50

-60

120

110

ICC1

ICC2

ICC3

Don't care

Normal

Don't care

-50

-60

120

110

Don't care

-50

-60

100

110

100

ICC4

ICC5

ICC6

Don't care

Normal

Don't care

-50

-60

120

110

120

110

Don't care

ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)

ICC4* : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one EDO mode cycle time, tHPC.

1 2 345 6 7...21

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