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K4E160811D-B

更新时间： 2024-11-20 12:58:43
品牌 Logo 应用领域
三星 - SAMSUNG 存储
页数 文件大小 规格书
21页 257K
描述
DRAM

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中文翻译

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K4E160811D-B 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：NBase Number Matches：1

K4E160811D-B 数据手册

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K4E170811D, K4E160811D  
K4E170812D, K4E160812D  
CMOS DRAM  
2M x 8Bit CMOS Dynamic RAM with Extended Data Out  
DESCRIPTION  
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of  
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K  
Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of  
this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh  
operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to real-  
ize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer and personal  
computer.  
FEATURES  
• Part Identification  
• Extended Data Out Mode operation  
(Fast page mode with Extended Data Out)  
• CAS-before-RAS refresh capability  
- K4E170811D-B(F) (5V, 4K Ref.)  
• RAS-only and Hidden refresh capability  
- K4E160811D-B(F) (5V, 2K Ref.)  
• Self-refresh capability (L-ver only)  
- K4E170812D-B(F) (3.3V, 4K Ref.)  
- K4E160812D-B(F) (3.3V, 2K Ref.)  
• Fast parallel test mode capability  
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs  
• Early Write or output enable controlled write  
• JEDEC Standard pinout  
• Active Power Dissipation  
Unit : mW  
5V  
3.3V  
Speed  
• Available in Plastic SOJ and TSOP(II) packages  
• Single +5V±10% power supply (5V product)  
• Single +3.3V±0.3V power supply (3.3V product)  
4K  
2K  
396  
360  
4K  
2K  
-50  
-60  
324  
288  
495  
440  
605  
550  
FUNCTIONAL BLOCK DIAGRAM  
• Refresh Cycles  
Part  
Refresh  
cycle  
Refresh period  
VCC  
RAS  
CAS  
W
Vcc  
Vss  
NO.  
Control  
Clocks  
Normal  
L-ver  
VBB Generator  
K4E170811D  
5V  
4K  
2K  
64ms  
K4E170812D 3.3V  
K4E160811D 5V  
Data in  
Buffer  
128ms  
Row Decoder  
Refresh Timer  
Refresh Control  
Refresh Counter  
32ms  
K4E160812D 3.3V  
DQ0  
to  
DQ7  
Memory Array  
2,097,152 x8  
Cells  
• Performance Range  
A0-A11  
(A0 - A10)*1  
A0 - A8  
Row Address Buffer  
Col. Address Buffer  
Speed  
-50  
Remark  
tRAC  
50ns  
60ns  
tCAC  
tRC  
tHPC  
Data out  
Buffer  
13ns  
84ns  
20ns 5V/3.3V  
Column Decoder  
OE  
(A0 - A9)*1  
-60  
15ns 104ns 25ns 5V/3.3V  
Note) *1 : 2K Refresh  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  
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与K4E160811D-B相关器件

型号 品牌 获取价格 描述 数据表
K4E160811D-BC50 SAMSUNG

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 		EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
K4E160811D-BC600 SAMSUNG

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 		EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
K4E160811D-BL50 SAMSUNG

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 		EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4E160811D-F SAMSUNG

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 		DRAM
K4E160811D-FC50 SAMSUNG

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 		EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28
K4E160811D-FC500 SAMSUNG

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 		EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28
K4E160811D-FL60 SAMSUNG

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 		EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
K4E160811D-FL600 SAMSUNG

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 		EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28
K4E160812C-BL500 SAMSUNG

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 		EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4E160812D SAMSUNG

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 		2M x 8Bit CMOS Dynamic RAM with Extended Data Out

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