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K4E170111C-BC60 PDF预览

K4E170111C-BC60

更新时间: 2024-11-20 21:21:15
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 336K
描述
EDO DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

K4E170111C-BC60 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ, SOJ24/26,.34针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.92
访问模式:FAST PAGE WITH EDO最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J24JESD-609代码:e0
长度:17.15 mm内存密度:16777216 bit
内存集成电路类型:EDO DRAM内存宽度:1
功能数量:1端口数量:1
端子数量:24字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX1输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ24/26,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
刷新周期:4096座面最大高度:3.76 mm
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

K4E170111C-BC60 数据手册

 浏览型号K4E170111C-BC60的Datasheet PDF文件第2页浏览型号K4E170111C-BC60的Datasheet PDF文件第3页浏览型号K4E170111C-BC60的Datasheet PDF文件第4页浏览型号K4E170111C-BC60的Datasheet PDF文件第5页浏览型号K4E170111C-BC60的Datasheet PDF文件第6页浏览型号K4E170111C-BC60的Datasheet PDF文件第7页 
CMOS DRAM  
K4E170111C  
16M x 1Bit CMOS Dynamic RAM with Extended Data Out  
DESCRIPTION  
This is a family of 16,777,216 x 1 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of  
memory cells within the same row, so called Hyper Page Mode. Access time (-50 or -60) are optional feature of this family. All of this  
family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.  
This 16Mx1 EDO DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consump-  
tion and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer.  
FEATURES  
• Extended Data Out Mode operatio  
(Fast Page Mode with Extended Data Out)  
• Part Identification  
• CAS-before-RAS refresh capability  
• RAS-only and Hidden refresh capability  
• Fast parallel test mode capability  
• TTL(5V) compatible inputs and outputs  
• Early Write Operation  
- K4E170111C (5V, 4K Ref.)  
Active Power Dissipation  
• JEDEC Standard pinout  
Unit : mW  
5V  
• Available in Plastic 26(24) SOJ 300mil  
• Single +5V±10% power supply  
Speed  
-50  
-60  
495  
440  
FUNCTIONAL BLOCK DIAGRAM  
Refresh Cycles  
Part  
NO.  
Refresh  
cycle  
Refresh  
Period  
RAS  
CAS  
W
Vcc  
Vss  
Control  
Clocks  
VBB Generator  
K4E170111C  
4K  
64ms  
Data in  
Buffer  
D
Row Decoder  
Refresh Timer  
Refresh Control  
Performance Range  
Memory Array  
16,777,216 x1  
Cells  
Refresh Counter  
Row Address Buffer  
Col. Address Buffer  
Speed  
-50  
tRAC  
50ns  
60ns  
tCAC  
tRC  
tHPC  
20ns  
25ns  
13ns  
15ns  
84ns  
104ns  
Data out  
Buffer  
A0-A11  
Q
-60  
Column Decoder  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  

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