生命周期: | Obsolete | 零件包装代码: | SOJ |
包装说明: | SOJ, | 针数: | 28 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.84 |
Is Samacsys: | N | 访问模式: | FAST PAGE WITH EDO |
最长访问时间: | 60 ns | 其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
JESD-30 代码: | R-PDSO-J28 | 长度: | 18.42 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 8 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 28 |
字数: | 2097152 words | 字数代码: | 2000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOJ |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
认证状态: | Not Qualified | 座面最大高度: | 3.76 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4E160812D-FL50 | SAMSUNG |
获取价格 |
EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 |
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K4E160812D-FL500 | SAMSUNG |
获取价格 |
EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28 |
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K4E160812D-FL60 | SAMSUNG |
获取价格 |
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 |
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K4E170111C-BC60 | SAMSUNG |
获取价格 |
EDO DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 |
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K4E170411C-BC500 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 |
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K4E170411C-BC60 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 |
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K4E170411C-FL50 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 |
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K4E170411C-FL500 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 |
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K4E170411D | SAMSUNG |
获取价格 |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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K4E170411D-B | SAMSUNG |
获取价格 |
DRAM |
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