是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | TFBGA, | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
访问模式: | MULTI BANK PAGE BURST | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B96 | 长度: | 13.3 mm |
内存密度: | 2147483648 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 96 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | SYNCHRONOUS | 组织: | 128MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | NOT SPECIFIED | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.575 V |
最小供电电压 (Vsup): | 1.425 V | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | YES | 技术: | CMOS |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4B2G1646F | SAMSUNG |
获取价格 |
96FBGA with Lead-Free & Halogen-Free | |
K4B2G1646F-BMK0 | SAMSUNG |
获取价格 |
96FBGA with Lead-Free & Halogen-Free | |
K4B2G1646F-BMMA | SAMSUNG |
获取价格 |
96FBGA with Lead-Free & Halogen-Free | |
K4B2G1646F-BYK0 | SAMSUNG |
获取价格 |
96FBGA with Lead-Free & Halogen-Free | |
K4B2G1646F-BYMA | SAMSUNG |
获取价格 |
96FBGA with Lead-Free & Halogen-Free | |
K4B2G1646Q | SAMSUNG |
获取价格 |
2Gb Q-die DDR3L SDRAM Only x16 | |
K4B2G1646Q-BCK0 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | |
K4B2G1646Q-BCK00 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | |
K4B2G1646Q-BMH9 | SAMSUNG |
获取价格 |
2Gb Q-die DDR3L SDRAM Only x16 | |
K4B2G1646Q-BMK0 | SAMSUNG |
获取价格 |
2Gb Q-die DDR3L SDRAM Only x16 |