生命周期: | Obsolete | 包装说明: | TFBGA, |
Reach Compliance Code: | unknown | 风险等级: | 5.68 |
访问模式: | MULTI BANK PAGE BURST | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B78 | 长度: | 11 mm |
内存密度: | 4294967296 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 4 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 78 |
字数: | 1073741824 words | 字数代码: | 1000000000 |
工作模式: | SYNCHRONOUS | 组织: | 1GX4 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 1.575 V | 最小供电电压 (Vsup): | 1.425 V |
标称供电电压 (Vsup): | 1.5 V | 表面贴装: | YES |
技术: | CMOS | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4B4G0446B-HCK0 | SAMSUNG |
获取价格 |
DDR DRAM, 1GX4, CMOS, PBGA78, FBGA-78 |
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K4B4G0446B-HCK00 | SAMSUNG |
获取价格 |
DDR DRAM, 1GX4, 0.225ns, CMOS, PBGA78, |
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K4B4G0446B-MCF7 | SAMSUNG |
获取价格 |
DDP 4Gb B-die DDR3 SDRAM Specification |
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K4B4G0446B-MCF70 | SAMSUNG |
获取价格 |
DDR DRAM, 1GX4, 0.4ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
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K4B4G0446B-MCF8 | SAMSUNG |
获取价格 |
DDP 4Gb B-die DDR3 SDRAM Specification |
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K4B4G0446B-MCF80 | SAMSUNG |
获取价格 |
暂无描述 |
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K4B4G0446B-MCH9 | SAMSUNG |
获取价格 |
DDP 4Gb B-die DDR3 SDRAM Specification |
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K4B4G0446B-MCH90 | SAMSUNG |
获取价格 |
DDR DRAM, 1GX4, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
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K4B4G0446B-MCH9T | SAMSUNG |
获取价格 |
DDR DRAM, 1GX4, CMOS, PBGA78, |
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K4B4G0446C | SAMSUNG |
获取价格 |
DDR3 SDRAM Memory |
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