Datasheet > K3P4C1000E-TC150

K3P4C1000E-TC150

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
4页	37K
描述
MASK ROM, 512KX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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中文翻译

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K3P4C1000E-TC150 数据手册

K3P4C1000E-TC

CMOS MASK ROM

8M-Bit (1Mx8 / 512Kx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

1,048,576 x 8(byte mode)

524,288 x 16(word mode)

· Fast access time

Random Access : 100ns(Max.)@CL=50pF,

120ns(Max.)@CL=100pF

The K3P4C1000E-TC is a fully static mask programmable ROM

fabricated using silicon gate CMOS process technology, and is

organized either as 1,048,576 x 8(byte mode) or as 524,288 x

16(word mode) depending on BHE voltage level.(See mode

selection table)

This device includes page read mode function, page read mode

allows 4 words (or 8 bytes) of data to read fast in the same

page, CE and A2 ~ A18 should not be changed.

Page Access

: 30ns(Max.)@CL=50pF

40ns(Max.)@CL=100pF

4 Words / 8 Bytes page access

· Supply voltage : single +5V

· Current consumption

This device operates with a 5V single power supply, and all

inputs and outputs are TTL compatible.

Operating : 80mA(Max.)

Standby : 50mA(Max.)

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

· Fully static operation

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

· All inputs and outputs TTL compatible

· Three state outputs

· Package

The K3P4C1000E-TC is packaged in a 44-TSOP2.

-. K3P4C1000E-TC : 44-TSOP2-400

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

N.C

A18

A17

N.C

A18

MEMORY CELL

MATRIX

(524,288x16/

1,048,576x8)

BUFFERS

AND

DECODER

42 A8

40 A10

39 A11

38 A12

37 A13

SENSE AMP.

DATA OUT

BUFFERS

AND

DECODER

A14

A15

A1 10

A0 11

CE 12

34 A16

TSOP2

33 BHE

32 VSS

A0~A1

A-1

. . .

VSS

OE 14

31 Q15/A-1

Q0/Q8

Q7/Q15

CONTROL

LOGIC

Q8 16

29 Q14

28 Q6

27 Q13

26 Q5

25 Q12

BHE

Q10 20

Pin Name

A0 - A1

Pin Function

Q11

VCC

Page Address Inputs

A2 - A18

Address Inputs

Data Outputs

K3P4C1000E-TC

Q0 - Q14

Output 15(Word mode)/

LSB Address(Byte mode)

Q15 /A-1

BHE

Word/Byte selection

Chip Enable

Output Enable

Power ( +5V)

Ground

VCC

VSS

N.C

No Connection

12 3 4

中文翻译

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与K3P4C1000E-TC150相关器件

型号	品牌	获取价格	描述	数据表
K3P4U1000D-DC12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42
K3P4U1000D-GC12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3P4U1000D-TC12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P4U1000D-TC120	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P4U1000D-TE12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P4U1000D-TE120	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P4U1000E-DC12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42
K3P4U1000E-GC12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3P4U1000E-TC12	SAMSUNG	获取价格	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3P4U1000F-TC	SAMSUNG	获取价格	MASK ROM

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