Datasheet > JS28F064M29EWTA

JS28F064M29EWTA

更新时间： 2024-01-18 18:35:33

品牌	Logo	应用领域
镁光 - MICRON		PC
页数	文件大小	规格书
132页	1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

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JS28F064M29EWTA 数据手册

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Signal Assignments

2. See Asynchronous Interface Bus Operation for detailed asynchronous interface signal

descriptions.

Signal Assignments

Figure 2: 48-Pin TSOP – Type 1 (Top View)

x16

DNU

x16

I/O15

I/O14

I/O13

I/O7

I/O6

I/O5

I/O7

I/O6

I/O5

I/O4

R/B#2 R/B2#

R/B#

RE#

R/B#

RE#

I/O4

I/O12

CE#

CE2# CE2#

DNU

CLE

ALE

CLE

ALE

WE# WE#

WP# WP#

I/O11

I/O3

I/O2

I/O1

I/O0

I/O10

I/O9

I/O8

I/O3

I/O2

I/O1

I/O0

DNU

1. These pins might not be bonded in the package; however, Micron recommends that the

customer connect these pins to the designated external sources for ONFI compatibility.

Notes:

2. For the 3V device, pin 38 is DNU. For the 1.8V device, pin 38 is LOCK.

3. R/B2# and CE2# are available on 16Gb devices only. They are NC for other configura-

tions.

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1...6 7 8910 11 12...132

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