JMSH1004BEQ
Electrical Characteristics (@ TJ = 25°C unless otherwise specified)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
STATIC PARAMETERS
Drain-Source Breakdown Voltage
V(BR)DSS ID = 250A, VGS = 0V
100
V
V
DS = 80V, VGS = 0V
1.0
5.0
IDSS
Zero Gate Voltage Drain Current
A
TJ
= 55°C
V
DS = 0V, VGS = ±20V
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
±100
4.0
nA
V
VGS(th) VDS = VGS, ID = 250A
VGS = 10V, ID = 20A
DS = 5V, ID = 20A
2.0
2.7
3.5
107
0.7
Static Drain-Source ON-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(ON)
gFS
4.2
m
S
V
IS = 1A, VGS = 0V
TC = 25°C
VSD
IS
1.0
V
Diode Continuous Current
231
A
DYNAMIC PARAMETERS (5)
Input Capacitance
Ciss
Coss
Crss
Rg
3433
905
13.0
2.1
pF
pF
pF
VGS = 0V, VDS = 50V, f = 1MHz
VGS = 0V, VDS= 0V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING PARAMETERS (5)
Total Gate Charge (@ VGS = 10V)
Qg
Qg
Qgs
Qgd
tD(on)
tr
57
38
nC
nC
nC
nC
ns
Total Gate Charge (@ VGS = 6.0V)
Gate Source Charge
VGS = 0 to 10V
VDS = 50V, ID = 20A
11.0
16.1
14.1
34
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS = 10V, VDS = 50V
ns
RL = 2.5 RGEN = 6
,
Turn-Off DelayTime
tD(off)
tf
60
ns
Turn-Off Fall Time
50
ns
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF = 20A, dIF/dt = 100A
IF = 20A, dIF/dt = 100A
/
s
s
60
ns
Qrr
/
63
nC
Thermal Performance
Parameter
Typ.
45
Max.
55
Symbol
RJA
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
0.65
0.80
RJC
Notes:
1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical
application board design.
2. This single-pulse measurement was taken under TJ_Max = 175°C.
3. This single-pulse measurement was taken under the following condition [L = 300H, VGS = 10V, VDD = 50V] while its value is limited by
TJ_Max = 175°C.
4. The power dissipation PD is based on TJ_Max = 175°C.
5. This value is guaranteed by design hence it is not included in the production test.
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
Page 2 of 6