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JMSH1005PE PDF预览

JMSH1005PE

更新时间: 2024-11-06 14:54:35
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页数 文件大小 规格书
6页 364K
描述
中压 N-ch (40V ~ 400V)

JMSH1005PE 数据手册

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JMSH1005PC  
JMSH1005PE  
100V 4.0mN-Ch Power MOSFET  
Features  
Product Summary  
Parameter  
VDS  
Value  
Unit  
V
Ultra-low RDS(ON)  
Low Gate Charge  
100  
3.0  
132  
4.0  
VGS(th)  
V
D (@ VGS = 10V) (1)  
A
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
I
RDS(ON) (@ VGS = 10V)  
m  
Halogen-free and RoHS-compliant  
Applications  
Motor Driving in Power Tool, E-vehicle, Robotics  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
Power Management in Telecom., Industrial Automation, CE  
TO-220-3L Top View  
TO-263-3L Top View  
D
D
S
G
G
D
S
G
S
Ordering Information  
Device  
TJ (°C)  
Package  
TO-220-3L  
TO-263-3L  
# of Pins  
Marking  
SH1005P  
SH1005P  
MSL  
N/A  
1
Media  
Tube  
Quantity (pcs)  
JMSH1005PC-U  
JMSH1005PE-13  
3
3
-55 to 150  
-55 to 150  
50  
13-inch Reel  
800  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
±20  
VGS  
V
TC = 25°C  
132  
Continuous Drain  
Current (1)  
ID  
A
T
C = 100°C  
83  
Pulsed Drain Current (2)  
Avalanche Energy (3)  
IDM  
528  
A
EAS  
486  
mJ  
TC = 25°C  
178  
Power Dissipation (4)  
PD  
W
T
C = 100°C  
71  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
R
DS(ON) vs. VGS  
Gate Charge  
20  
15  
10  
5
10  
8
ID = 20A  
VDS = 50V  
ID = 20A  
6
4
2
0
0
0
5
10  
15  
20  
0
20  
40  
60  
80  
VGS (V)  
Qg (nC)  
Jiangsu JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.2  
Page 1 of 6  

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