JMSH1008AC
JMSH1008AE
100V 6.8m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
2.8
112
6.8
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
TO-263-3L Top View
D
S
D
G
G
G
D
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH1008A
SH1008A
MSL
N/A
1
Media
Tube
Quantity (pcs)
JMSH1008AC-U
JMSH1008AE-13
3
3
-55 to 150
-55 to 150
50
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
VGS
V
TC = 25°C
112
Continuous Drain
Current (1)
ID
A
TC = 100°C
71
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
356
A
A
45
EAS
101
mJ
TC = 25°C
192
Power Dissipation (4)
PD
W
TC = 100°C
77
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
30
10
8
ID = 20A
VDS = 50V
D = 20A
25
20
15
10
5
I
6
4
2
0
0
10
20
30
40
2
4
6
8
10
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.5
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