JMSH1006AG
100V 5.3m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
100
2.7
102
5.3
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
PDFN5x6-8L
Pin Configuration
Top View
Bottom View Type-A
Bottom View Type-B
Top View
D
1
2
3
4
8
7
6
5
G
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH1006AG-13
PDFN5x6-8L
8
SH1006A
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
100
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS
±20
V
TC = 25°C
102
Continuous Drain
Current (1)
ID
A
TC = 100°C
64
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
366
A
A
47
EAS
110
mJ
TC = 25°C
130
Power Dissipation (4)
PD
W
TC = 100°C
52
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
30
10
8
VDS = 50V
D = 20A
ID = 20A
24
18
12
6
I
6
4
2
0
0
0
10
20
30
40
50
0
3
6
9
12
15
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.2
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