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JMSH1006PG PDF预览

JMSH1006PG

更新时间: 2024-04-09 19:00:05
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页数 文件大小 规格书
7页 1208K
描述
中压 N-ch (40V ~ 400V)

JMSH1006PG 数据手册

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100V, 76A, 5.0mΩ N-channel Power SGT MOSFET  
JMSH1006PG  
Product Summary  
Features  
Excellent RDS(ON) and Low Gate Charge  
Parameters  
VDSS  
Value  
100  
3.0  
Unit  
V
100% UIS TESTED  
100% ΔVds TESTED  
Halogen-free; RoHS-compliant  
Pb-free plating  
VGS(th)_Typ  
V
ID(@VGS=10V)  
RDS(ON)_Typ(@VGS=10V  
76  
A
5.0  
mW  
Applications  
Load Switch  
PWM Application  
Power Management  
D
S
G
PDFN5X6-8L  
Schematic Diagram  
Pin Assignment  
Ordering Information  
Device  
Per Carton  
Package  
Marking  
MSL  
Reel Size Reel(pcs)  
13" 5000  
(pcs)  
JMSH1006PG  
PDFN5x6-8L  
H1006P  
1
50000  
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Unit  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
±20  
76  
V
V
TC = 25°C  
ID  
Continuous Drain Current  
Pulsed Drain Current (1)  
A
TC = 100°C  
53  
IDM  
Refer to Fig.4  
A
Single Pulsed Avalanche Energy (2)  
TC = 25°C  
TC = 100°C  
Junction & Storage Temperature Range  
EAS  
356  
94  
mJ  
PD  
Power Dissipation  
W
38  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Thermal Resistance, Junction to Ambient(3)  
Thermal Resistance, Junction to Case  
Max  
60  
Symbol  
RθJA  
RθJC  
1.3  
All product information is copyrighted and subject to legal disclaimers.  
REV 1.0 | 1/7  

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