100V, 76A, 5.0mΩ N-channel Power SGT MOSFET
JMSH1006PG
Product Summary
Features
Excellent RDS(ON) and Low Gate Charge
Parameters
VDSS
Value
100
3.0
Unit
V
100% UIS TESTED
100% ΔVds TESTED
Halogen-free; RoHS-compliant
Pb-free plating
VGS(th)_Typ
V
ID(@VGS=10V)
RDS(ON)_Typ(@VGS=10V
76
A
5.0
mW
Applications
Load Switch
PWM Application
Power Management
D
S
G
PDFN5X6-8L
Schematic Diagram
Pin Assignment
Ordering Information
Device
Per Carton
Package
Marking
MSL
Reel Size Reel(pcs)
13" 5000
(pcs)
JMSH1006PG
PDFN5x6-8L
H1006P
1
50000
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)
Parameter
Value
Symbol
Unit
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
76
V
V
TC = 25°C
ID
Continuous Drain Current
Pulsed Drain Current (1)
A
TC = 100°C
53
IDM
Refer to Fig.4
A
Single Pulsed Avalanche Energy (2)
TC = 25°C
TC = 100°C
Junction & Storage Temperature Range
EAS
356
94
mJ
PD
Power Dissipation
W
38
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient(3)
Thermal Resistance, Junction to Case
Max
60
Symbol
Unit
RθJA
°C/W
RθJC
1.3
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