Datasheet > JMSH1008PE

JMSH1008PE

更新时间： 2024-04-09 18:58:32

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	1077K
描述
中压 N-ch (40V ~ 400V)

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JMSH1008PE 数据手册

JMSH1008PC

JMSH1008PE

100V 6.3mW N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

Unit

•

Ultra-low R_DS(ON)

•

100

3.0

113

6.3

•

Low Gate Charge

•

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

•

100% UIS Tested, 100% R_gTested

•

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

•

Halogen-free and RoHS-compliant

•

Applications

•

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Current Switching in DC/DC & AC/DC (SR) Sub-systems

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TO-220-3L Top View

TO-263-3L Top View

Ordering Information

Device

Package

TO-263-3L

TO-220-3L

# of Pins

Marking

SH1008P

MSL

T_J(°C)

Media

13-inch Reel

Tube

Quantity (pcs)

JMSH1008PE-13

JMSH1008PC-U

-55 to 150

800

(@ T_A= 25°C unless otherwise specified)

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

113

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

452

E_AS

216

T_C= 25°C

227

(4)

P_D

Power Dissipation

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 50V

I_D= 20A

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 1 of 6

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