Datasheet > JMSH0804NK

JMSH0804NK

更新时间： 2023-12-06 19:51:57

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	390K
描述
中压 N-ch (40V ~ 400V)

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JMSH0804NK 数据手册

JMSH0804NK

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

V_(BR)DSSI_D= 250A, V_GS= 0V

_DS= 64V, V_GS= 0V

1.0

5.0

I_DSS

Zero Gate Voltage Drain Current

A

T_J

= 55°C

V_DS= 0V, V_GS= ±20V

V_GS(th)V_DS= V_GS, I_D= 250A

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

±100

4.0

2.0

3.0

3.3

_GS= 10V, I_D= 20A

_DS= 5V, I_D= 20A

Static Drain-Source ON-Resistance

Forward Transconductance

Diode Forward Voltage

R_DS(ON)

g_FS

4.1

m

I_S= 1A, V_GS= 0V

T_C= 25°C

V_SD

I_S

0.68

1.0

Diode Continuous Current

DYNAMIC PARAMETERS ⁽⁵⁾

Input Capacitance

C_iss

C_oss

C_rss

R_g

4083

1313



_GS= 0V, V_DS= 40V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0V, V_DS= 0V, f = 1MHz

1.9

SWITCHING PARAMETERS ⁽⁵⁾

Total Gate Charge (@ V_GS= 10V)

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge (@ V_GS= 6.0V)

Gate Source Charge

_GS= 0 to 10V

V_DS= 40V, I_D= 20A

Gate Drain Charge

13.8

18.9

Turn-On DelayTime

Turn-On Rise Time

V_GS= 10V, V_DS= 40V

R_L= 2.0, R_GEN= 3

Turn-Off DelayTime

t_D(off)

t_f

Turn-Off Fall Time

13.1

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_rr

I_F= 20A, dI_F/dt = 100A



Q_rr

/

Thermal Performance

Parameter

Typ.

Max.

Symbol

R_JA

Unit

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

1.3

1.6

R_JC

Notes:

1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical

application board design.

2. This single-pulse measurement was taken under T_{J_Max}= 150°C.

3. E_ASof 434 mJ is based on starting T_J= 25°C, L = 3.0mH, I_AS= 17A, V_GS= 10V, V_DD= 40V; 100% test at L = 0.1mH, I_AS= 68A.

4. The power dissipation P_Dis based on T_{J_Max}= 150°C.

5. This value is guaranteed by design hence it is not included in the production test.

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 3.1

Page 2 of 6

123 4 5 6

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