Datasheet > JBL102T

JBL102T

更新时间： 2024-11-18 17:01:15

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	1062K
描述
中压 N-ch (40V ~ 400V)

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JBL102T 数据手册

JBL102T

100V 1.8mW TOLL N-Ch Power MOSFET

Product Summary

Features

•

Ultra-low ON-resistance, R_DS(ON)

Parameter

Value

100

3.0

Unit

V_DS

Low Gate Charge, Q_g

100% UIS and R_gTested

Pb-free Lead Plating

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽²⁾

272

1.8

R_{DS(ON)_Typ}(@ V_GS= 10V)

Halogen-free and RoHS-compliant

Applications

•

Power Management in Telecom., Industrial Automation, CE

Current Switching in DC/DC & AC/DC Sub-systems

Motor Driving in Power Tool, E-bike

PowerJE^®10x12 Bottom View

PowerJE^®10x12 Top View

Drain

Tab

Gate

Pin 1

Source

Pins 2-8

Pin 1

Ordering Information

Device

Package

PowerJE^®10x12 ⁽¹⁾

# of Pins

Marking

MSL

T_J(°C)

-55 to 150

Media

13-inch Reel

Quantity (pcs)

JBL102T

BL102T

2000

Note 1: PowerJE^®is a registered trademark of JieJie Micro., its package outline is compatible to that of TO-LeadLess (TOLL).

(@ T_A= 25°C unless otherwise specified)

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Value

100

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±20

T_C= 25°C

272

Continuous Drain

Current ⁽²⁾

I_D

T_C= 100°C

172

Pulsed Drain Current ⁽³⁾

Avalanche Energy ⁽⁴⁾

I_DM

1089

1536

329

E_AS

T_C= 25°C

Power Dissipation ⁽⁵⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

132

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 50V

I_D= 20A

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 1 of 6

12 3 4 5 6

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